Ultimate scaling limits for high-frequency GaAs MESFET'sGOLIO, J. M.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 7, pp 839-848, issn 0018-9383Article

An analytical expression for Fermi level versus sheet carrier concentration for HEMT modelingKOLA, S; GOLIO, J. M; MARACAS, G. N et al.IEEE electron device letters. 1988, Vol 9, Num 3, pp 136-138, issn 0741-3106Article

Simulation of optically injection-locked microwave oscillators using a novel SPICE modelWARREN, D; GOLIO, J. M; JOHNSON, E et al.IEEE transactions on microwave theory and techniques. 1988, Vol 36, Num 11, pp 1535-1539, issn 0018-9480Article

Projected frequency limits of GaAs MESFET'sGOLIO, J. M; GOLIO, J. R. J.IEEE transactions on microwave theory and techniques. 1991, Vol 39, Num 1, pp 142-146, issn 0018-9480, 5 p.Article

Optimum semiconductors for high-frequency and low-noise MESFET applicationsGOLIO, J. M; TREW, R. J.I.E.E.E. transactions on electron devices. 1983, Vol ED 30, Num 10, pp 1411-1413, issn 0018-9383Article

Comment on «a nonlinear model for the GaAs ballistic diode»BLAKEY, P. A; GOLIO, J. M; GRONDIN, R. O et al.Proceedings of the IEEE. 1986, Vol 74, Num 1, issn 0018-9219, 225Article

A modeling technique for characterizing ion-implanted material using C-V and DLTS dataGOLIO, J. M; TREW, R. J; MARACAS, G. N et al.Solid-state electronics. 1984, Vol 27, Num 4, pp 367-373, issn 0038-1101Article

Frequency-dependent electrical characteristics of GaAs MESFET'sGOLIO, J. M; MILLER, M. G; MARACAS, G. N et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 5, pp 1217-1227, issn 0018-9383, 11 p., 0Article